Western Digital’s new flash drive for ultra high-end smartphones launched

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Western Digital Corp launched its new embedded flash drive (EFD) that provides the speed and capacity necessary to maximize the capabilities of ultra high-end smartphones and mobile devices. Built on the company’s advanced 96-layer 3D NAND, the iNAND MC EU511 supports Universal Flash Storage (UFS) 3.0 Gear 4/2 Lane specifications. The advanced iNAND SmartSLC Generation 6 propels turbo sequential write speeds up to 750MB/s, enabling a 2-hour movie download in only 3.6 seconds.

The 5G standard promises ultra-fast transfer speeds, low latency, lower power consumption and high network capacities for all mobile and edge devices. These capabilities necessitate the high-speed data interfaces, such as UFS 3.0, transforming not only smartphones but billions of interconnected Internet of Things (IoT) devices.

“Smartphones are increasingly becoming the hub of all things connected,” said Oded Sagee, senior director, Devices, Western Digital. “High speed 5G networks are set to deliver data at up to 100X the speed of previous generations and amplify AI on many devices. Artificial Intelligence (AI) powered by integrated neural processing units (NPU) with access to big and fast data will transform how we use our smartphones. Real-time computing on the edge will be in such high demand that high standards of data capturing and accessing are fundamental. With our UFS 3.0 embedded flash drive, we are enabling users to experience the new power of 5G applications, on-demand, seamlessly and instantaneously.”

Powered by the higher performance of a UFS 3.0 flash interface, 5G mobile devices will provide greater performance and lower latency for applications such as augmented reality, virtual reality (AR/VR) and mobile gaming. Additionally, high network speeds will enable consumers to quickly download and view ultra-high-resolution photos and 4K/8K media on mobile devices.

The iNAND MC EU511 leads the industry with turbo sequential write speed up to 750MB/s and sequential read speed that is nearly double its predecessor. With increased random read/write performance and capacities ranging from 64GB to 512GB, iNAND MC EU511 is ready to empower mobile devices for the coming 5G revolution. The company is currently sampling the iNAND MC EU511 EFD solutions with OEMs.

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